GA200TS60U Vishay, GA200TS60U Datasheet - Page 5

• Manufacturer Part Number: GA200TS60U
• Description: IGBT FAST 600V 200A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA200TS60U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 20.068nF @ 30V
• Power - Max: 625W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Not Compliant

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Fig. 9 - Typical Switching Losses vs. Gate
40000
30000
20000
10000
40
35
30
25
20
0
0

Fig. 7 - Typical Capacitance vs.
V
V
T
I
1
J
C
CC
GE
Collector-to-Emitter Voltage
= 360V
= 15V
= 125 C
= 200A
R
V
10
G
CE

°
, Gate Resistance (Ohm)
V
C
C
C
, Collector-to-Emitter Voltage (V)
Resistance
GE
ies
res
oes

C
C
C
ies

oes

res
=
=
=
=
20
0V,
C
C
C
ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
30
C
ce
SHORTED
40
100
50
1000
100
10
20
16
12
1
8
4
0
Fig. 10 - Typical Switching Losses vs.
-60 -40 -20
0


R
R
V
V
V
I
Fig. 8 - Typical Gate Charge vs.
GE
CC
G1
CC
C
G
=27 ;R
= 400V
= 135A
= 15V
= 360V
= Ohm
Gate-to-Emitter Voltage
T , Junction Temperature ( C )
200
Junction Temperature
Q , Total Gate Charge (nC)
J
G
G2
0
GA200TS60U
= 0
20
400
40
60
600
80 100 120 140 160

I =

I =

I =
C
C
C
800
°
400
200
100
A
A
A
1000
5