GA200TS60U Vishay, GA200TS60U Datasheet - Page 6

• Manufacturer Part Number: GA200TS60U
• Description: IGBT FAST 600V 200A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA200TS60U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 20.068nF @ 30V
• Power - Max: 625W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Not Compliant

GA200TS60U
1000
6
100
Fig. 13 - Typical Forward Voltage Drop vs.
70
60
50
40
30
20
10
10
Fig. 11 - Typical Switching Losses vs.
0
1.0
0

R
T
V
V
R
Fo rw a rd V o lta g e D rop - V
CC
GE
G
J
G1
Instantaneous Forward Current
Collector-to-Emitter Current
I
=27 ;R
= 125 C
= 360V
= 15V
C
= Ohm
2.0
, Collector-to-emitter Current (A)
100
°
G2
3.0
= 0
T = 2 5°C
T = 1 25 °C
4.0
J
J
200
5.0
F M
(V )
300
6.0
400
2 0 0 0 0
1 5 0 0 0
1 0 0 0 0
5 0 0 0
Fig. 14 - Typical Stored Charge vs. di
6 0 0
5 0 0
4 0 0
3 0 0
2 0 0
1 0 0
0
0
5 0 0
0
V
T
V
G E
J
CE
V
Fig. 12 - Reverse Bias SOA
CE
= 125°C
= 20V
measured at terminal (Peak Voltage)
1 0 0
I = 4 00 A
I = 1 00 A
I = 2 00 A
F
F
F
, Collector-to-E mitter Voltage (V)
SAFE OPERATING AREA
2 0 0
1 0 0 0
di /dt - (A /µ s)
f
3 0 0
4 0 0
V = 3 6 0V
T = 1 25 °C
T = 2 5°C
R
J
J
1 5 0 0
www.irf.com
5 0 0
6 0 0
f
/dt
2 0 0 0
7 0 0
A