BFG10,215 NXP Semiconductors, BFG10,215 Datasheet - Page 4

• Manufacturer Part Number: BFG10,215
• Description: TRANS RF NPN 2GHZ 8V SOT143
• Manufacturer: NXP Semiconductors

Specifications of BFG10,215

• Package / Case: TO-253-4, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 8V
• Frequency - Transition: 1.9GHz
• Gain: 7dB
• Power - Max: 400mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 50mA, 5V
• Current - Collector (ic) (max): 250mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 25
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 8 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 250 mA
• Power Dissipation: 400 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure (db Typ @ F): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-6183-2; BFG10,215

NXP Semiconductors
APPLICATION INFORMATION
RF performance at T
Ruggedness in class-AB operation
The BFG10 is capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated
output power under pulsed conditions up to a supply voltage of 7 V, f = 1.9 GHz and a duty cycle of 1 : 8.
handbook, halfpage
Pulsed, class-AB, duty cycle: < 1 : 8
NPN 2 GHz RF power transistor
Pulsed, class-AB operation.
V
Circuit optimized for P
CE
(dB)
G p
Fig.4
= 3.6 V; V
MODE OF OPERATION
10
8
6
4
2
0
0
Power gain and efficiency as functions
of load power; typical values.
BE
= 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
100
L
= 200 mW.
amb
200
= 25 C in a common-emitter test circuit (see Fig.7).
300
G p
c
400
P (mW)
(GHz)
L
1.9
MLC820
f
500
Rev. 05 - 22 November 2007
100
80
60
40
20
0
(%)
c
V
(V)
3.6
CE
handbook, halfpage
Pulsed, class-AB operation.
V
Circuit optimized for P
(mW)
P L
CE
500
400
300
200
100
= 3.6 V; V
(mA)
0
Fig.5
I
0
CQ
1
BE
= 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
Load power as a function of drive
power; typical values.
L
= 200 mW.
(mW)
50
200
P
L
BFG10; BFG10/X
100
typ. 7
(dB)
G
Product specification
5
p
P (mW)
D
MLC821
4 of 11
150
typ. 60
(%)
50
c