BFG10,215 NXP Semiconductors, BFG10,215 Datasheet - Page 8

• Manufacturer Part Number: BFG10,215
• Description: TRANS RF NPN 2GHZ 8V SOT143
• Manufacturer: NXP Semiconductors

Specifications of BFG10,215

• Package / Case: TO-253-4, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 8V
• Frequency - Transition: 1.9GHz
• Gain: 7dB
• Power - Max: 400mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 50mA, 5V
• Current - Collector (ic) (max): 250mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 25
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 8 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 250 mA
• Power Dissipation: 400 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure (db Typ @ F): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-6183-2; BFG10,215

NXP Semiconductors
NPN 2 GHz RF power transistor
Dimensions in mm.
The components are situated on one side of the copper-clad PTFE microfibre-glass board, the other side is not etched and
serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
handbook, full pagewidth
Fig.8 Printed-circuit board and component lay-out for common-emitter test circuit in Fig.7.
V
bias
60
C1
T1
R2
L10
R1
L1
L9
Base
Base
Rev. 05 - 22 November 2007
C11
C2
L8
C3
L2 L3
C4
70
C14
C5
L7
L4
C10
L6
C7 C8
C6
Collector
C16
Collector
C15
L5
C12
C13
C9
MLC823
BFG10; BFG10/X
V S
Product specification
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