BFG10,215 NXP Semiconductors, BFG10,215 Datasheet - Page 9

• Manufacturer Part Number: BFG10,215
• Description: TRANS RF NPN 2GHZ 8V SOT143
• Manufacturer: NXP Semiconductors

Specifications of BFG10,215

• Package / Case: TO-253-4, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 8V
• Frequency - Transition: 1.9GHz
• Gain: 7dB
• Power - Max: 400mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 50mA, 5V
• Current - Collector (ic) (max): 250mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 25
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 8 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 250 mA
• Power Dissipation: 400 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure (db Typ @ F): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-6183-2; BFG10,215

NXP Semiconductors
PACKAGE OUTLINE
NPN 2 GHz RF power transistor
Dimensions in mm.
handbook, full pagewidth
max
10
o
0.75
0.60
max
1.1
max
30
0.150
0.090
o
max
0.1
max
10
o
Rev. 05 - 22 November 2007
Fig.9 SOT143.
0.88
0
0.1
4
TOP VIEW
1
3.0
2.8
1.9
1.7
3
2
0.48
0
0.1
0.1
A
B
1.4
1.2
M
A B
max
2.5
BFG10; BFG10/X
0.2
MBC845
M
A B
Product specification
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