H27UF081G1M-TPCB HYNIX SEMICONDUCTOR, H27UF081G1M-TPCB Datasheet - Page 19

IC, MEMORY, FLASH NAND 1GB, TSOP48

H27UF081G1M-TPCB

Manufacturer Part Number
H27UF081G1M-TPCB
Description
IC, MEMORY, FLASH NAND 1GB, TSOP48
Manufacturer
HYNIX SEMICONDUCTOR
Datasheet

Specifications of H27UF081G1M-TPCB

Access Time
45ns
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
0°C To +70°C
Base Number
27
Interface
Serial
Logic
RoHS Compliant
Package / Case
TSOP
Memory Type
Flash - NAND
Memory Configuration
128M X 8
Rohs Compliant
Yes
Memory Size
1Gbit
Rev 0.2 / May. 2007
CLE Setup time
CLE Hold time
CE setup time
CE hold time
WE pulse width
ALE setup time
ALE hold time
Data setup time
Data hold time
Write Cycle time
WE High hold time
Data Transfer from Cell to register
ALE to RE Delay
CLE to RE Delay
Ready to RE Low
RE Pulse Width
WE High to Busy
Read Cycle Time
RE Access Time
RE High to Output High Z
CE High to Output High Z
RE or CE high to Output hold
RE High Hold Time
Output High Z to RE low
CE Access Time
WE High to RE low
Last RE High to busy (at sequential read)
CE High to Ready (in case of interception by CE at read)
CE High Hold Time (at the last serial read)
Device Resetting Time (Read / Program / Erase)
Write Protection time
NOTE:
1. If t
2. If Reset Command (FFh) is written at Ready state, the device goes into Busy for maximum 5us
3. To break the sequential read cycle, CE must be held for longer time than tCEH.
4. The time to Ready depends on the value of the pull-up resistor tied R/B# pin.ting time.
5. Program / Erase Enable Operation : WP high to WE High.
Program / Erase Disable Operation : WP Low to WE High.
CS
is less than 10ns t
WP
must be minimum 35ns, otherwise, t
Parameter
(3)
Table 12: AC Timing Characteristics
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
WP
may be minimum 25ns.
Symbol
t
t
WW
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
WHR
t
t
t
t
t
t
t
RHZ
REH
CLH
ALH
CLR
REA
CHZ
t
CEA
CRY
CEH
RST
CLS
ALS
WC
WH
WP
DH
t
WB
OH
CS
CH
DS
AR
RR
RP
RC
RB
IR
R
HY27US(08/16)1G1M Series
(5)
Min
25
100
100
10
10
10
20
10
50
15
10
10
20
25
50
10
15
60
0
0
0
0
(1)
3.3Volt
60+tr(R/B#)
5/10/500
Max
100
100
15
30
30
20
45
Preliminary
(2)
(4)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
ns
19

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