H27UF081G1M-TPCB HYNIX SEMICONDUCTOR, H27UF081G1M-TPCB Datasheet - Page 26

• Manufacturer Part Number: H27UF081G1M-TPCB
• Description: IC, MEMORY, FLASH NAND 1GB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27UF081G1M-TPCB

• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Base Number: 27
• Interface: Serial
• Logic: RoHS Compliant
• Package / Case: TSOP
• Memory Type: Flash - NAND
• Memory Configuration: 128M X 8
• Rohs Compliant: Yes
• Memory Size: 1Gbit

Rev 0.2 / May. 2007
CLE
CE
WE
ALE
RE
I/Ox
R/B
Input Command
Serial Data
80h
tWC
Col. Add1
Address
Column
Row Add1 Row Add2
Figure 14: Page Program Operation
Row Address
tWC
Row Add3
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Din
N
Serial Input
tWC
Din
M
Command
Program
10h
HY27US(08/16)1G1M Series
tWB
tPROG
I/Oo=0 Successful Program
I/Oo=1 Error in Program
Read Status
Command
Preliminary
70h
I/Oo
26