H27UF081G1M-TPCB HYNIX SEMICONDUCTOR, H27UF081G1M-TPCB Datasheet - Page 5

IC, MEMORY, FLASH NAND 1GB, TSOP48

H27UF081G1M-TPCB

Manufacturer Part Number
H27UF081G1M-TPCB
Description
IC, MEMORY, FLASH NAND 1GB, TSOP48
Manufacturer
HYNIX SEMICONDUCTOR
Datasheet

Specifications of H27UF081G1M-TPCB

Access Time
45ns
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
0°C To +70°C
Base Number
27
Interface
Serial
Logic
RoHS Compliant
Package / Case
TSOP
Memory Type
Flash - NAND
Memory Configuration
128M X 8
Rohs Compliant
Yes
Memory Size
1Gbit
Rev 0.2 / May. 2007
IO15 - IO8
IO7 - IO0
CLE
ALE
CE
RE
WE
WP
R/B
Vcc
Vss
NC
Figure1: Logic Diagram
Table 1: Signal Names
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Data Inputs / Outputs (x16 Only)
Data Inputs / Outputs
Command latch enable
Address latch enable
Chip Enable
Read Enable
Write Enable
Write Protect
Ready / Busy
Power Supply
Ground
No Connection
HY27US(08/16)1G1M Series
Preliminary
5

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