H27UF081G1M-TPCB HYNIX SEMICONDUCTOR, H27UF081G1M-TPCB Datasheet - Page 37

IC, MEMORY, FLASH NAND 1GB, TSOP48

H27UF081G1M-TPCB

Manufacturer Part Number
H27UF081G1M-TPCB
Description
IC, MEMORY, FLASH NAND 1GB, TSOP48
Manufacturer
HYNIX SEMICONDUCTOR
Datasheet

Specifications of H27UF081G1M-TPCB

Access Time
45ns
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
0°C To +70°C
Base Number
27
Interface
Serial
Logic
RoHS Compliant
Package / Case
TSOP
Memory Type
Flash - NAND
Memory Configuration
128M X 8
Rohs Compliant
Yes
Memory Size
1Gbit
Rev 0.2 / May. 2007
Symbol
alpha
A1
A2
CP
E1
D
A
B
C
E
e
L
Table 17: 48pin-TSOP1, 12 x 20mm, Package Mechanical Data
Figure 31: 48pin-TSOP1, 12 x 20mm, Package Outline
11.910
19.900
18.300
0.050
0.980
0.170
0.100
0.500
Min
0
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
millimeters
12.000
20.000
18.400
0.500
Typ
HY27US(08/16)1G1M Series
12.120
20.100
18.500
Preliminary
1.200
0.150
1.030
0.250
0.200
0.100
0.680
Max
5
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