IXA60IF1200NA IXYS SEMICONDUCTOR, IXA60IF1200NA Datasheet - Page 2

• Manufacturer Part Number: IXA60IF1200NA
• Description: IGBT,1200V,88A,SOT-227B
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXA60IF1200NA

• Transistor Type: IGBT
• Dc Collector Current: 88A
• Collector Emitter Voltage Vces: 2.1V
• Power Dissipation Max: 290W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-227B
• Rohs Compliant: Yes
• Power Dissipation Pd: 290W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
I
I
V
Q
I
t
E
R
Symbol
V
R
V
R
R
R
R
R
τ
τ
τ
τ
IXYS reserves the right to change limits, conditions and dimensions.
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Diode
F25
F
RM
rr
Equivalent Circuits for Simulation
1
2
3
4
rec(off)
thJC
90
F
0
0
0
0
1
2
3
4
rr
I
V
R1
0
C1
Definition
Forward current
Forward voltage
Reverse recovery charge
Maximum reverse recovery current
Reverse recovery time
Reverse recovery losses at turn-off
Thermal resistance juntion to case
Definition
IGBT
Diode
R
0
R2
C2
R3
C3
R4
Conditions
T = 25°C
T =
I =
V =
di /dt = -
I =
C4
F
F
C
C
R
F
60
90
60
600
Data according to IEC 60747and per diode unless otherwise specified
°C
A
A
1200
V
A/µs;
T
T
T
T
T
VJ
VJ
VJ
VJ
VJ
= 25°C
=
=
=
=
125
125
150
150
°C
°C
°C
°C
IXA60IF1200NA
min.
min.
0.1
0.05
0.21
0.07
0.0025
0.03
0.03
0.08
IGBT
Ratings
Ratings
typ.
typ.
1.95
1.95
350
2.5
60
8
max.
max.
1.25
14.2
0.137
0.1
0.233
0.13
0.0025
0.03
0.03
0.08
2.2
0.6
1.1
Diode
85
51
28
20100623a
Unit
K/W
Unit
m
m
µC
mJ
ns
Ω
Ω
A
A
V
V
A
V
V