IXA60IF1200NA IXYS SEMICONDUCTOR, IXA60IF1200NA Datasheet - Page 4

• Manufacturer Part Number: IXA60IF1200NA
• Description: IGBT,1200V,88A,SOT-227B
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXA60IF1200NA

• Transistor Type: IGBT
• Dc Collector Current: 88A
• Collector Emitter Voltage Vces: 2.1V
• Power Dissipation Max: 290W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-227B
• Rohs Compliant: Yes
• Power Dissipation Pd: 290W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
K
J
P
L
Nut M4 DIN 934
Lens Head Screw M4x8
DIN 7985
U
B
Data according to IEC 60747and per diode unless otherwise specified
E
H
G
Q
A
F
SYM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
IXA60IF1200NA
MILLIMETERS INCHES
MIN
31.50 31.88 1.240 1.255
7.80
4.09
4.09
4.09
14.91 15.11 .587
30.12 30.30 1.186 1.193
37.80 38.23 1.489 1.505
11.68 12.22 .460
8.92
0.76
12.60 12.85 .496
25.15 25.42 .990
1.98
4.95
26.54 26.90 1.045 1.059
3.94
4.72
24.59 25.07 .968
-.05
3.30
19.81 21.08 .780
MAX MIN
8.20
4.29
4.29
4.29
9.60
0.84
2.13
5.97
4.42
4.85
.10
4.57
.307
.161
.161
.161
.351
.030
.078
.195
.155
.186
-.002 .004
.130
MAX
.323
.169
.169
.169
.595
.481
.378
.033
.506
1.001
.084
.235
.174
.191
.987
.180
.830
20100623a