IXA60IF1200NA IXYS SEMICONDUCTOR, IXA60IF1200NA Datasheet - Page 6

• Manufacturer Part Number: IXA60IF1200NA
• Description: IGBT,1200V,88A,SOT-227B
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXA60IF1200NA

• Transistor Type: IGBT
• Dc Collector Current: 88A
• Collector Emitter Voltage Vces: 2.1V
• Power Dissipation Max: 290W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-227B
• Rohs Compliant: Yes
• Power Dissipation Pd: 290W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
I
[A]
[A]
[mJ]
E
RR
I
F
rec
120
100
4.0
3.2
2.4
1.6
0.8
0.0
80
60
40
20
90
80
70
60
50
40
30
20
10
0
0
600
600
0.0
Fig. 11 Typ. recovery energy E
Fig. 9 Typ. peak reverse current I
Fig. 7 Typ. Forward current versus V
T
V
T
V
700
700
VJ
R
VJ
0.5
R
= 125°C
T
T
= 125°C
= 600 V
= 600 V
VJ
VJ
= 125°C
= 25°C
800
800
1.0
di
di
900
900
F
F
V
/dt [A/µs]
/dt [A/µs]
F
1.5
[V]
1000
1000
2.0
1100
1100
rec
versus di/dt
RM
vs. di/dt
2.5
1200
1200
F
120 A
60 A
30 A
120 A
60 A
30 A
1300
1300
3.0
Data according to IEC 60747and per diode unless otherwise specified
[K/W]
[ns]
Z
t
rr
thJC
[µC]
Q
rr
0.01
700
600
500
400
300
200
100
0.1
14
12
10
0.001
8
6
4
2
0
1
600
600
Fig. 8 Typ. reverse recov.charge Q
Fig. 10 Typ. recovery time t
Fig. 12 Typ. transient thermal impedance
700
700
T
V
VJ
R
0.01
= 125°C
= 600 V
800
800
di
di
IXA60IF1200NA
900
900
F
F
t
/dt [A/µs]
/dt [A/µs]
p
0.1
[s]
1000
1000
rr
versus di/dt
1100
1100
T
V
VJ
R
= 125°C
1
= 600 V
rr
Diode
IGBT
vs. di/dt
1200
1200
120 A
60 A
30 A
120 A
60 A
30 A
20100623a
1300
1300
10