IXA60IF1200NA IXYS SEMICONDUCTOR, IXA60IF1200NA Datasheet - Page 3

• Manufacturer Part Number: IXA60IF1200NA
• Description: IGBT,1200V,88A,SOT-227B
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXA60IF1200NA

• Transistor Type: IGBT
• Dc Collector Current: 88A
• Collector Emitter Voltage Vces: 2.1V
• Power Dissipation Max: 290W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-227B
• Rohs Compliant: Yes
• Power Dissipation Pd: 290W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
T
T
R
Weight
M
M
V
d
d
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
VJ
stg
Package SOT-227B (minibloc)
S
A
thCH
ISOL
Logo
D
T
DateCode
Product Marking
YYWW
Isolation voltage
Creapage distance on surface
Striking distance through air
Definition
Virtual junction temperature
Storage temperature
Thermal resistance case to heatsink
Mounting torque
Terminal torque
abcde
XXXXXX
Assembly Code
Standard
Ordering
Part No.
IXA 60 IF 1200 NA
Part Name
Conditions
t = 1 second
t = 1 minute
Marking on Product
IXA60IF1200NA
Data according to IEC 60747and per diode unless otherwise specified
Delivering Mode
Tube
Part number
1200
Base Qty Code Key
NA
60
IF
X
A
I
=
=
=
=
=
=
=
10
IGBT
XPT IGBT
Gen 1 / std
Current Rating [A]
Copack
Reverse Voltage [V]
SOT-227B (minibloc)
IXA60IF1200NA
508765
min.
3000
2500
-55
-40
1.1
1.1
8
4
Ratings
typ.
0.10
30
max.
150
150
1.5
1.5
20100623a
Unit
K/W
mm
mm
Nm
Nm
°C
°C
V
V
g