BSM50GD60DLCE3226 Infineon Technologies, BSM50GD60DLCE3226 Datasheet

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BSM50GD60DLCE3226

Manufacturer Part Number
BSM50GD60DLCE3226
Description
IGBT Modules N-CH 600V 70A
Manufacturer
Infineon Technologies
Datasheet
1.BSM50GD60DLCE3226.pdf (9 pages)

Specifications of BSM50GD60DLCE3226

Configuration
Hex
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
2.2 V
Continuous Collector Current At 25 C
70 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
250 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EconoPACK 2A

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BSM50GD60DLCE3226
Manufacturer:
EUPEC/Infineon
Quantity:
1 000
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
BSM50GD60DLCE3226
Quantity:
82
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I
Isolations-Prüfspannung
insulation test voltage
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
prepared by: Andreas Vetter
approved by: Michael Hornkamp
IGBT-Module
IGBT-Modules
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Transistor / Transistor
Technische Information / Technical Information
2
t - value, Diode
T
T
t
T
t
V
RMS, f= 50Hz, t= 1min.
I
I
I
f= 1MHz, T
f= 1MHz, T
V
V
V
date of publication: 2006-01-31
revision: 2
BSM 50 GD 60 DLC E3226
P
P
C
C
C
C
C
C
R
CE
CE
CE
= 1ms, T
= 1ms
= 50A, V
= 50A, V
= 1mA, V
= 80°C
= 25°C
= 25°C, Transistor
= 0V, t
= 600V, V
= 600V, V
= 0V, V
p
= 10ms, T
GE
GE
C
CE
GE
vj
vj
= 80°C
= 25°C, V
= 25°C, V
= 15V, T
= 15V, T
= V
= 20V, T
GE
GE
= 0V, T
= 0V, T
GE
, T
1 (8)
Vj
vj
vj
vj
= 125°C
vj
CE
CE
= 25°C
= 125°C
= 25°C
= 25°C
vj
vj
= 25V, V
= 25V, V
= 25°C
= 125°C
GE
GE
= 0V
= 0V
V
V
I
V
V
V
C,nom.
I
I
C
I
P
C
I
CRM
CE sat
GE(th)
FRM
CES
GES
GES
I
ISOL
CES
I
I
2
C
F
res
tot
ies
t
min.
4,5
-
-
-
-
-
-
-
+/- 20V
BSM 50 GD 60 DLC E3226
typ.
1,95
2,20
600
100
250
100
760
2,5
5,5
2,2
0,2
50
70
50
1
1
-
max.
2,45
500
400
6,5
-
-
-
-
A
mA
kV
nF
nF
µA
nA
W
V
A
A
A
V
A
A
V
V
V
2
s

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BSM50GD60DLCE3226 Summary of contents

Page 1

Technische Information / Technical Information IGBT-Module IGBT-Modules Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom ...

Page 2

Technische Information / Technical Information IGBT-Module IGBT-Modules Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) ...

Page 3

Technische Information / Technical Information IGBT-Module IGBT-Modules Thermische Eigenschaften / Thermal properties Innerer Wärmewiderstand thermal resistance, junction to case Übergangs-Wärmewiderstand thermal resistance, case to heatsink Höchstzulässige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Mechanische Eigenschaften / Mechanical ...

Page 4

Technische Information / Technical Information IGBT-Module IGBT-Modules Ausgangskennlinie (typisch) Output characteristic (typical) 100 Tvj = 25°C 80 Tvj = 125° 0,0 0,5 Ausgangskennlinienfeld (typisch) Output characteristic (typical) 100 VGE = 8V 80 VGE = 9V VGE ...

Page 5

Technische Information / Technical Information IGBT-Module IGBT-Modules Übertragungscharakteristik (typisch) Transfer characteristic (typical) 100 Tvj = 25°C 80 Tvj = 125° Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 100 Tvj = 25°C ...

Page 6

Technische Information / Technical Information IGBT-Module IGBT-Modules Schaltverluste (typisch) Switching losses (typical) 2,5 Eon Eoff 2,0 Erec 1,5 1,0 0,5 0 Schaltverluste (typisch) Switching losses (typical) 2,5 Eon 2,0 Eoff Erec 1,5 1,0 0,5 0,0 0 BSM 50 ...

Page 7

Technische Information / Technical Information IGBT-Module BSM DLC E3226 IGBT-Modules Transienter Wärmewiderstand Transient thermal impedance 1 0,1 0,01 0,001 i r [K/kW] : IGBT i [sec] : IGBT i r [K/kW] : Diode i [sec] : Diode ...

Page 8

Technische Information / Technical Information IGBT-Module IGBT-Modules Gehäusemaße / Schaltbild Package outline / Circuit diagram BSM DLC E3226 8 (8) BSM DLC E3226 ...

Page 9

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...

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