BSM50GD60DLCE3226 Infineon Technologies, BSM50GD60DLCE3226 Datasheet - Page 5

• Manufacturer Part Number: BSM50GD60DLCE3226
• Description: IGBT Modules N-CH 600V 70A
• Manufacturer: Infineon Technologies

Specifications of BSM50GD60DLCE3226

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.2 V
• Continuous Collector Current At 25 C: 70 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 2A

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
100
100
80
60
40
20
80
60
40
20
0
0
0,0
5
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
0,2
Tvj = 25°C
Tvj = 125°C
6
Tvj = 25°C
Tvj = 125°C
0,4
7
BSM 50 GD 60 DLC E3226
0,6
8
5 (8)
V
V
GE
F
0,8
9
[V]
[V]
1,0
10
I
C
V
= f (V
CE
= 20V
1,2
11
GE
)
I
F
= f (V
1,4
12
F
BSM 50 GD 60 DLC E3226
)
1,6
13