BSM50GD60DLCE3226 Infineon Technologies, BSM50GD60DLCE3226 Datasheet - Page 4

• Manufacturer Part Number: BSM50GD60DLCE3226
• Description: IGBT Modules N-CH 600V 70A
• Manufacturer: Infineon Technologies

Specifications of BSM50GD60DLCE3226

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.2 V
• Continuous Collector Current At 25 C: 70 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 2A

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
100
100
80
60
40
20
80
60
40
20
0
0
0,0
0,0
Ausgangskennlinienfeld (typisch)
Output characteristic (typical)
Ausgangskennlinie (typisch)
Output characteristic (typical)
0,5
0,5
VGE = 8V
VGE = 9V
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
Tvj = 25°C
Tvj = 125°C
1,0
1,0
BSM 50 GD 60 DLC E3226
1,5
2,0
1,5
4 (8)
V
V
CE
CE
2,5
[V]
[V]
2,0
3,0
I
V
C
GE
= f (V
= 15V
I
T
C
vj
= f (V
= 125°C
3,5
CE
2,5
)
CE
)
4,0
3,0
4,5
BSM 50 GD 60 DLC E3226
3,5
5,0