BSM50GD60DLCE3226 Infineon Technologies, BSM50GD60DLCE3226 Datasheet - Page 8

• Manufacturer Part Number: BSM50GD60DLCE3226
• Description: IGBT Modules N-CH 600V 70A
• Manufacturer: Infineon Technologies

Specifications of BSM50GD60DLCE3226

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.2 V
• Continuous Collector Current At 25 C: 70 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 2A

Technische Information / Technical Information
IGBT-Module
BSM 50 GD 60 DLC E3226
IGBT-Modules
Gehäusemaße / Schaltbild
Package outline / Circuit diagram
BSM 50 GD 60 DLC E3226
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