BSM50GD60DLCE3226 Infineon Technologies, BSM50GD60DLCE3226 Datasheet - Page 6

• Manufacturer Part Number: BSM50GD60DLCE3226
• Description: IGBT Modules N-CH 600V 70A
• Manufacturer: Infineon Technologies

Specifications of BSM50GD60DLCE3226

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.2 V
• Continuous Collector Current At 25 C: 70 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 2A

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
2,5
2,0
1,5
1,0
0,5
0,0
2,5
2,0
1,5
1,0
0,5
0,0
0
0
Schaltverluste (typisch)
Switching losses (typical)
Schaltverluste (typisch)
Switching losses (typical)
20
Eon
Eoff
Erec
Eon
Eoff
Erec
5
BSM 50 GD 60 DLC E3226
40
6 (8)
R
I
C
G
E
10
I
[A]
C
[ ]
= 50A , V
on
E
= f (R
R
G,on
on
= f (I
= 2,7
CE
60
= 300V , T
G
), E
C
= = = = R
), E
off
G,off
= f (R
vj
= 2,7 , V
off
= 125°C
= f (I
15
G
), E
CC
C
80
), E
= 300V, T
rec
rec
= f (R
= f (I
vj
= 125°C
G
BSM 50 GD 60 DLC E3226
C
)
)
100
20