BSM50GD60DLCE3226 Infineon Technologies, BSM50GD60DLCE3226 Datasheet - Page 7

• Manufacturer Part Number: BSM50GD60DLCE3226
• Description: IGBT Modules N-CH 600V 70A
• Manufacturer: Infineon Technologies

Specifications of BSM50GD60DLCE3226

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.2 V
• Continuous Collector Current At 25 C: 70 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 2A

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
0,01
0,1
1
0,001
120
100
80
60
40
20
0
Transienter Wärmewiderstand
Transient thermal impedance
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
0
r
r
i
i
[K/kW]
[K/kW]
i
i
[sec]
[sec]
i
100
: IGBT
: IGBT
: Diode
: Diode
BSM 50 GD 60 DLC E3226
IC,Modul
IC,Chip
0,01
200
0,0018
0,0487
281,9
21,2
1
7 (8)
300
0,1
V
0,0240
0,0169
262,0
270,4
CE
400
2
t [sec]
[V]
Z
thJC
R
= f (t)
G,off
= 2,7
500
0,0651
0,1069
176,2
169,8
1
3
T
vj
= 125°C
Zth:IGBT
Zth:Diode
600
0,9115
0,6626
40,6
77,9
4
BSM 50 GD 60 DLC E3226
700
10