AM29LV256MH113REI AMD (ADVANCED MICRO DEVICES), AM29LV256MH113REI Datasheet - Page 3

• Manufacturer Part Number: AM29LV256MH113REI
• Description: Flash Memory IC
• Manufacturer: AMD (ADVANCED MICRO DEVICES)

Specifications of AM29LV256MH113REI

• Memory Size: 256Mbit
• Package/case: 56-TSOP
• Access Time, Tacc: 110nS
• Mounting Type: Surface Mount
• Supply Voltage: 3V

Am29LV256M
256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBit
Uniform Sector Flash Memory with VersatileI/O
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
PERFORMANCE CHARACTERISTICS
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
This product has been retired and is not available for designs. For new and current designs, S29GL256N supersedes Am29LV256M and is the factory-recommended
migration path. Please refer to the S29GL256N datasheet for specifications and ordering information. Availability of this document is retained for reference and his-
torical purposes only.
Single power supply operation
— 3 volt read, erase, and program operations
VersatileI/O
— Device generates data output voltages and tolerates
Manufactured on 0.23 µm MirrorBit process
technology
SecSi
— 128-word/256-byte sector for permanent, secure
— May be programmed and locked at the factory or by
Flexible sector architecture
— Five hundred twelve 32 Kword (64 Kbyte) sectors
Compatibility with JEDEC standards
— Provides pinout and software compatibility for
Minimum 100,000 erase cycle guarantee per sector
20-year data retention at 125°C
High performance
— 100 ns access time
— 30 ns page read times
— 0.5 s typical sector erase time
— 15 µs typical effective write buffer word programming
data input voltages on the CE# and DQ inputs/outputs
as determined by the voltage on the V
from 1.65 to 3.6 V
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
the customer
single-power supply flash, and superior inadvertent
write protection
time: 16-word/32-byte write buffer reduces overall
programming time for multiple-word updates
TM
(Secured Silicon) Sector region
TM
control
Refer to AMD’s Website (www.amd.com) for the latest information.
IO
pin; operates
SOFTWARE & HARDWARE FEATURES
— 4-word/8-byte page read buffer
— 16-word/32-byte write buffer
Low power consumption (typical values at 3.0 V, 5
MHz)
— 13 mA typical active read current
— 50 mA typical erase/program current
— 1 µA typical standby mode current
Package options
— 56-pin TSOP
— 64-ball Fortified BGA
Software features
— Program Suspend & Resume: read other sectors
— Erase Suspend & Resume: read/program other
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
— CFI (Common Flash Interface) compliant: allows host
Hardware features
— Sector Group Protection: hardware-level method of
— Temporary Sector Group Unprotect: V
— WP#/ACC input accelerates programming time
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
before programming operation is completed
sectors before an erase operation is completed
multiple-word or byte programming time
system to identify and accommodate multiple flash
devices
preventing write operations within a sector group
of changing code in locked sector groups
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings
erase cycle completion
TM
TM
Control
3.0 Volt-only
Publication# 25263
Issue Date: December 16, 2005
Rev: C Amendment/+6
ID
-level method