AM29LV256MH113REI AMD (ADVANCED MICRO DEVICES), AM29LV256MH113REI Datasheet - Page 62

• Manufacturer Part Number: AM29LV256MH113REI
• Description: Flash Memory IC
• Manufacturer: AMD (ADVANCED MICRO DEVICES)

Specifications of AM29LV256MH113REI

• Memory Size: 256Mbit
• Package/case: 56-TSOP
• Access Time, Tacc: 110nS
• Mounting Type: Surface Mount
• Supply Voltage: 3V

AC CHARACTERISTICS
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
60
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. D
4. Waveforms are for the word mode.
Input voltage with respect to V
(including A9, OE#, and RESET#)
Input voltage with respect to V
V
CC
Current
Addresses
RESET#
RY/BY#
WE#
Data
OE#
CE#
Figure 24. Alternate CE# Controlled Write (Erase/Program)
Description
t
RH
SS
SS
555 for program
2AA for erase
CC
on all pins except I/O pins
on all I/O pins
. Test conditions: V
t
t
t
WS
WH
WC
A0 for program
55 for erase
t
GHEL
t
t
t
DS
PA for program
SA for sector erase
555 for chip erase
CP
CPH
t
AS
t
D A T A S H E E T
DH
Operation Timings
CC
Am29LV256M
= 3.0 V, one pin at a time.
t
AH
PD for program
30 for sector erase
10 for chip erase
OUT
t
is the data written to the device.
BUSY
t
t
POLL
WHWH1 or 2
Data# Polling
–100 mA
–1.0 V
–1.0 V
Min
DQ7#,
DQ15
PA
D
OUT
December 16, 2005
V
+100 mA
CC
12.5 V
Max
+ 1.0 V