AM29LV256MH113REI AMD (ADVANCED MICRO DEVICES), AM29LV256MH113REI Datasheet - Page 35

• Manufacturer Part Number: AM29LV256MH113REI
• Description: Flash Memory IC
• Manufacturer: AMD (ADVANCED MICRO DEVICES)

Specifications of AM29LV256MH113REI

• Memory Size: 256Mbit
• Package/case: 56-TSOP
• Access Time, Tacc: 110nS
• Mounting Type: Surface Mount
• Supply Voltage: 3V

non-erase-suspended sector. After completing a pro-
gramming operation in the Erase Suspend mode, the
system may once again read array data with the same
exception. See the
Commands
The system must issue the reset command to return
the device to the read (or erase-suspend-read) mode if
DQ5 goes high during an active program or erase op-
eration, or if the device is in the autoselect mode. See
the next section,
tion.
See also
Device Bus Operations
The
rameters, and
Reset Command
Writing the reset command resets the device to the
read or erase-suspend-read mode. Address bits are
don’t cares for this command.
The reset command may be written between the se-
quence cycles in an erase command sequence before
erasing begins. This resets the device to the read
mode. Once erasure begins, however, the device ig-
nores reset commands until the operation is complete.
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the device to
the read mode. If the program command sequence is
written while the device is in the Erase Suspend mode,
writing the reset command returns the device to the
erase-suspend-read mode. Once programming be-
gins, however, the device ignores reset commands
until the operation is complete.
The reset command may be written between the se-
quence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must be written to return to the read mode. If the de-
vice entered the autoselect mode while in the Erase
Suspend mode, writing the reset command returns the
device to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation,
writing the reset command returns the device to the
read mode (or erase-suspend-read mode if the device
was in Erase Suspend).
Note that if DQ1 goes high during a Write Buffer Pro-
gramming operation, the system must write the
Write-to-Buffer-Abort Reset command sequence to
reset the device for the next operation.
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and device codes,
and determine whether or not a sector is protected.
December 16, 2005
Read-Only Operations
Requirements for Reading Array Data
section for more information.
Figure 13
Reset
Erase Suspend/Erase Resume
Command, for more informa-
section for more information.
shows the timing diagram.
table provides the read pa-
D A T A S H E E T
in the
Am29LV256M
Table 12
This method is an alternative to that shown in
which is intended for PROM programmers and re-
quires V
mand sequence may be written to an address that is
either in the read or erase-suspend-read mode. The
autoselect command may not be written while the de-
vice is actively programming or erasing.
The autoselect command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle that contains the autoselect command. The
device then enters the autoselect mode. The system
may read at any address any number of times without
initiating another autoselect command sequence:
The system must write the reset command to return to
the read mode (or erase-suspend-read mode if the de-
vice was previously in Erase Suspend).
Enter SecSi Sector/Exit SecSi Sector
Command Sequence
The SecSi Sector region provides a secured data area
containing an 8-word/16-byte random Electronic Serial
Number (ESN). The system can access the SecSi
Sector region by issuing the three-cycle Enter SecSi
Sector command sequence. The device continues to
access the SecSi Sector region until the system is-
sues the four-cycle Exit SecSi Sector command se-
quence. The Exit SecSi Sector command sequence
returns the device to normal operation. Tables
12
command sequences. See also
con) Sector Flash Memory Region”
tion. Note that the ACC function and unlock bypass
modes are not available when the SecSi Sector is en-
abled.
Word/Byte Program Command Sequence
Programming is a four-bus-cycle operation. The pro-
gram command sequence is initiated by writing two
unlock write cycles, followed by the program set-up
command. The program address and data are written
next, which in turn initiate the Embedded Program al-
gorithm. The system is not required to provide further
controls or timings. The device automatically provides
internally generated program pulses and verifies the
programmed cell margin. Tables
A read cycle at address XX00h returns the manu-
facturer code.
Three read cycles at addresses 01h, 0Eh, and 0Fh
return the device code.
A read cycle to an address containing a sector ad-
dress (SA), and the address 02h on A7–A0 in word
mode returns 01h if the sector is protected, or 00h if
it is unprotected.
show the address and data requirements for both
ID
shows the address and data requirements.
on address pin A9. The autoselect com-
“SecSi (Secured Sili-
11
for further informa-
and
12
show the
Table
11
and
33
3,