AM29LV320DT90EI AMD (ADVANCED MICRO DEVICES), AM29LV320DT90EI Datasheet - Page 24

• Manufacturer Part Number: AM29LV320DT90EI
• Description: Flash Memory IC
• Manufacturer: AMD (ADVANCED MICRO DEVICES)

Specifications of AM29LV320DT90EI

• Memory Configuration: 4M X 8 / 2M X 16 Bit
• Package/case: 48-TSOP
• Supply Voltage Max: 3.6V
• Leaded Process Compatible: No
• Peak Reflow Compatible (260 C): No
• Access Time, Tacc: 90nS
• Mounting Type: Surface Mount
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

22
(Word Mode)
(Word Mode)
Addresses
Addresses
1Ah
1Bh
1Ch
1Dh
1Eh
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
1Fh
20h
21h
22h
23h
24h
25h
26h
(Byte Mode)
(Byte Mode)
Addresses
Addresses
2Ch
3Ch
4Ch
20h
22h
24h
26h
28h
2Ah
2Eh
30h
38h
3Ah
3Eh
40h
42h
44h
46h
48h
4Ah
32h
34h
36h
Table 9. CFI Query Identification String
000Ah
0051h
0052h
0059h
0002h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
0027h
0036h
0000h
0000h
0004h
0000h
0000h
0005h
0000h
0004h
0000h
Data
Table 10. System Interface String
Data
D A T A S H E E T
Query Unique ASCII string “QRY”
Primary OEM Command Set
Address for Primary Extended Table
Alternate OEM Command Set (00h = none exists)
Address for Alternate OEM Extended Table (00h = none exists)
V
D7–D4: volt, D3–D0: 100 millivolt
V
D7–D4: volt, D3–D0: 100 millivolt
V
V
Typical timeout per single byte/word write 2
Typical timeout for Min. size buffer write 2
Typical timeout per individual block erase 2
Typical timeout for full chip erase 2
Max. timeout for byte/word write 2
Max. timeout for buffer write 2
Max. timeout per individual block erase 2
Max. timeout for full chip erase 2
Am29LV320D
CC
CC
PP
PP
Min. voltage (00h = no V
Max. voltage (00h = no V
Min. (write/erase)
Max. (write/erase)
PP
PP
Description
Description
N
times typical
pin present)
pin present)
N
N
times typical (00h = not supported)
N
times typical
ms (00h = not supported)
N
N
times typical
N
N
µ
s (00h = not supported)
ms
µs
December 14, 2005