AM29LV320DT90EI AMD (ADVANCED MICRO DEVICES), AM29LV320DT90EI Datasheet - Page 52

• Manufacturer Part Number: AM29LV320DT90EI
• Description: Flash Memory IC
• Manufacturer: AMD (ADVANCED MICRO DEVICES)

Specifications of AM29LV320DT90EI

• Memory Configuration: 4M X 8 / 2M X 16 Bit
• Package/case: 48-TSOP
• Supply Voltage Max: 3.6V
• Leaded Process Compatible: No
• Peak Reflow Compatible (260 C): No
• Access Time, Tacc: 90nS
• Mounting Type: Surface Mount
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V V
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
TSOP AND BGA PACKAGE CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
DATA RETENTION
50
Parameter
Sector Erase Time
Chip Erase Time
Byte Program Time
Word Program Time
Accelerated Byte/Word Program Time
Chip Program Time
(Note 3)
Input voltage with respect to V
(including A9, OE#, and RESET#)
Input voltage with respect to V
V
Parameter Description
Minimum Pattern Data Retention Time
CC
Parameter Symbol
programming typicals assume checkerboard pattern.
1,000,000 cycles.
the maximum chip programming time listed, since most
bytes program faster than the maximum program times
listed.
Current
C
C
C
OUT
IN2
IN
A
= 25°C, f = 1.0 MHz.
Word Mode
Description
Byte Mode
SS
SS
Control Pin Capacitance
Parameter Description
CC
on all pins except I/O pins
on all I/O pins
Output Capacitance
. Test conditions: V
Input Capacitance
CC
= 2.7 V,
Typ (Note 1)
D A T A S H E E T
CC
0.7
50
11
36
24
9
7
Am29LV320D
= 3.0 V, one pin at a time.
V
4. In the pre-programming step of the Embedded Erase
5. System-level overhead is the time required to execute the
Max (Note 2)
V
V
OUT
IN
IN
algorithm, all bytes are programmed to 00h before erasure.
two- or four-bus-cycle sequence for the program command.
See Table 14 on page 29 for further information on
command definitions.
= 0
= 0
300
360
210
108
= 0
15
72
Test Setup
Test Conditions
–100 mA
–1.0 V
–1.0 V
Fine-pitch BGA
Fine-pitch BGA
Fine-pitch BGA
Min
CC
150°C
125°C
TSOP
TSOP
TSOP
, 1,000,000 cycles. Additionally,
Unit
sec
sec
sec
µs
µs
µs
Excludes 00h programming
prior to erasure (Note 4)
Typ
Excludes system level
8.5
7.5
4.2
5.4
3.9
6
overhead (Note 5)
December 14, 2005
Comments
V
+100 mA
CC
Max
12.5 V
7.5
5.0
6.5
4.7
12
Min
9
Max
10
20
+ 1.0 V
Years
Years
Unit
Unit
pF
pF
pF
pF
pF
pF