AM29LV320DT90EI AMD (ADVANCED MICRO DEVICES), AM29LV320DT90EI Datasheet - Page 55

• Manufacturer Part Number: AM29LV320DT90EI
• Description: Flash Memory IC
• Manufacturer: AMD (ADVANCED MICRO DEVICES)

Specifications of AM29LV320DT90EI

• Memory Configuration: 4M X 8 / 2M X 16 Bit
• Package/case: 48-TSOP
• Supply Voltage Max: 3.6V
• Leaded Process Compatible: No
• Peak Reflow Compatible (260 C): No
• Access Time, Tacc: 90nS
• Mounting Type: Surface Mount
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

REVISION SUMMARY
Revision A (November 1, 2000)
Initial release.
Revision A+1 (January 23, 2001)
Ordering Information
Corrected FBGA part number table to include bottom
boot part numbers.
Revision A+2 (February 1, 2001)
Connection Diagrams
Corrected FBGA ball matrix.
Revision A+3 (July 2, 2001)
Global
Changed data sheet status from Advance Information
to Preliminary.
Table 3,
Addresses
Corrected sector block size for SA60–SA62 to 3x64.
Sector/Sector Block Protection and Unprotection
Noted that sectors are erased in parallel.
Secured Silicon Sector Flash Memory Region
Noted changes for upcoming versions of these de-
vices: reduced Secured Silicons ector size, different
ESN location for top boot devices, and deletion of Se-
cured Silicon erase functionality. Current versions of
these devices remain unaffected.
Revision B (July 12, 2002)
Global
Deleted Preliminary status from document.
Ordering Information
Deleted burn-in option.
Table 1,
In the legend, corrected V
V.
Secured Silicon Sector Flash Memory Region
Added description of Secured Silicon protection verifi-
cation.
Autoselect Command Sequence
Clarified description of function.
Table 14,
Corrected autoselect codes for Secured Silicon Fac-
tory Protect.
December 14, 2005
Top Boot Secured Silicon Sector
Am29LV320D Device Bus Operations
Am29LV320D Command Definitions
HH
maximum voltage to 12.5
D A T A S H E E T
Am29LV320D
Erase and Program Operations
Corrected to indicate t
value.
Revision B+1 (July 30, 2002)
Figure 3,
Deleted fifth block in flowchart and modified text in
fourth block.
Revision C (October 25, 2002)
Distinctive Characteristics
Changed endurance from “write” to “erase” cycles.
Connection Diagrams
Deleted ultrasonic reference and added package
types to special package handling text.
Ordering Information
Added commercial temperature range and removed
extended temperature range.
Secured Silicon Flash Memory Region
Customer Lockable subsection: Deleted reference to
alternate method of sector protection.
Command Definitions
Noted the following:
Autoselect, Secured Silicon, and CFI functions are not
available during a program or erase operation.
ACC and unlock bypass modes are not available when
the Secured Silicon Sector is enabled.
Writing incorrect data or commands may place the de-
vice in an unknown state. A reset command is then re-
quired.
AC Characteristics
Read-only Operations; Word/Byte Configuration:
Changed t
DC Characteristics
Deleted I
TSOP, SO, and BGA Package Capacitance
Added BGA capacitance to table.
Revision C+1 (February 16, 2003)
Distinctive Characteristics
Added reference to MirrorBit in Secured Silicon sec-
tion.
Added Sector Architecture section.
Secured Silicon Flash Memory Region
Referenced MirrorBit for an example in last sentence
of first paragraph.
ACC
Secured Silicon Sector Protect Verify
DF
and added I
and t
FLQZ
BUSY
to 16 ns for all speed options.
LR
specification is a maximum
specifications from table.
table
53