AM29LV320DT90EI AMD (ADVANCED MICRO DEVICES), AM29LV320DT90EI Datasheet - Page 25

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AM29LV320DT90EI

Manufacturer Part Number
AM29LV320DT90EI
Description
Flash Memory IC
Manufacturer
AMD (ADVANCED MICRO DEVICES)

Specifications of AM29LV320DT90EI

Memory Configuration
4M X 8 / 2M X 16 Bit
Package/case
48-TSOP
Supply Voltage Max
3.6V
Leaded Process Compatible
No
Peak Reflow Compatible (260 C)
No
Access Time, Tacc
90nS
Mounting Type
Surface Mount
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
December 14, 2005
(Word Mode)
Addresses
2Ah
2Bh
2Ch
2Dh
2Eh
3Ah
3Bh
3Ch
27h
28h
29h
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
(Byte Mode)
Addresses
5Ch
6Ch
4Eh
50h
52h
54h
56h
58h
5Ah
5Eh
60h
62h
64h
66h
68h
6Ah
6Eh
70h
72h
74h
76h
78h
Table 11. Device Geometry Definition
003Eh
0016h
0002h
0000h
0000h
0000h
0002h
0007h
0000h
0020h
0000h
0000h
0000h
0001h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
Data
D A T A S H E E T
Device Size = 2
Flash Device Interface description (refer to CFI publication 100)
Max. number of bytes in multi-byte write = 2
(00h = not supported)
Number of Erase Block Regions within device
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 2 Information
Erase Block Region 3 Information
Erase Block Region 4 Information
Am29LV320D
N
byte
Description
N
23

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