SKW25N120 Infineon Technologies, SKW25N120 Datasheet
SKW25N120
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SKW25N120 Summary of contents
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... J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors for target applications http://www.infineon.com/igbt Marking C off j 2.9mJ K25N120 150 C Symbol jmax jmax 150 SKW25N120 PG-TO-247-3-21 (TO-247AC) Package PG-TO-247-3-21 Value 1200 313 -55...+150 260 s Rev. 2_1 Unit ...
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... Conditions Symbol Conditions =1200V,V = =0V,V =20V SKW25N120 Max. Value Unit 0.4 K/W 1.15 40 Value Unit min. typ. max. 1200 - - V 2.5 3.1 3.6 - 3.7 4.3 2.0 2 350 - - 1400 - - 100 2150 2600 pF - 260 310 - 110 130 - 225 300 240 - A Rev. 2_1 Apr 06 ...
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... =150 C j Symbol Conditions Energy losses include “tail” and diode reverse recovery SKW25N120 Value Unit Min. typ. max 730 950 - 2.2 2 1.5 2.0 - 3 470 A/ s Value Unit Min. typ. max 820 990 - 3.8 4 2.9 3.8 - 6.7 8.4 - 280 ...
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... V Figure 2. Safe operating area ( 60A 50A 40A 30A 20A 10A 0A 25°C 100°C 125°C Figure 4. Collector current as a function of case temperature ( SKW25N120 10V 100V 1000V , - COLLECTOR EMITTER VOLTAGE 150 50°C 75°C 100°C 125° CASE TEMPERATURE ...
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... V Figure 6. Typical output characteristics (T = 150 10V 11V -50°C Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V SKW25N120 V =17V G E 15V 13V 11V COLLECTOR EMITTER VOLTAGE CE I =50A C I =25A C I =12.5A C 0°C 50°C 100°C 150° ...
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... Figure 10. Typical switching times as a function of gate resistor (inductive load 800V dynamic test circuit in Fig 100°C 150°C -50°C Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I = 0.3mA SKW25N120 t d(off) t d(on GATE RESISTOR G = 150 +15V/0V 25A max. min. 0°C 50°C 100° ...
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... 800V dynamic test circuit in Fig K K/W E off -3 10 K/W 100°C 150°C 1µs Figure 16. IGBT transient thermal impedance as a function of pulse width ( SKW25N120 *) E and E include losses due to diode recovery GATE RESISTOR G = 150 +15V/0V 25A D=0.5 0.2 0.1 0. 0.07417 ...
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... Figure 18. Typical capacitance as a function of collector-emitter voltage (V GE 500A 400A 300A 200A 100A 0A 14V 15V 10V Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (100V V 8 SKW25N120 10V 20V 30V COLLECTOR EMITTER VOLTAGE 1MHz) 12V 14V 16V 18V V , ...
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... Fig.E ) 400A =25A 300A 200A/ s 100A/ s 0A/ s 300A/ s 900A/ s Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V = 800V dynamic test circuit in Fig SKW25N120 I =25A F I =12A F 500A/ s 700A/ s 900A DIODE CURRENT SLOPE F = 150 =12A F ...
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... T =25°C J 1.0V 0.5V 0. 0°C Figure 26. Typical diode forward voltage as a function of junction temperature , ( s ) 0.30438 0.09698 0.00521 0.00042 10ms 100ms 1s 10 SKW25N120 I =50A F I =25A F I =12A F 40°C 80°C 120° JUNCTION TEMPERATURE j Rev. 2_1 Apr 06 ...
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... PG-TO247-3-21 Power Semiconductors SKW25N120 11 Rev. 2_1 Apr 06 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors SKW25N120 i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance L =180nH, and stray capacity C =40pF Rev. 2_1 Apr 06 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors SKW25N120 13 Rev. 2_1 Apr 06 ...