SKW25N120 Infineon Technologies, SKW25N120 Datasheet - Page 10

• Manufacturer Part Number: SKW25N120
• Description: IGBT NPT 1200V 46A 313W TO247-3
• Manufacturer: Infineon Technologies

Specifications of SKW25N120

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.6V @ 15V, 25A
• Current - Collector (ic) (max): 46A
• Power - Max: 313W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Dc Collector Current: 46A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 313W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Transistor Type: IGBT
• Rohs Compliant: Yes
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 46.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
Figure 25. Typical diode forward current as
a function of forward voltage
10
10
80A
60A
40A
20A
Figure 27. Diode transient thermal
impedance as a function of pulse width
(D = t
10
0A
-1
-2
0
0V
K/W
K/W
K/W
10µs
p
/ T)
0.1
0.05
0.2
D =0.5
single pulse
V
100µs
1V
F
,
t
FORWARD VOLTAGE
T
p
,
J
=150°C
PULSE WIDTH
1ms
2V
R
0.05339
0.40771
0.22473
0.46420
R , ( K / W )
1
C
1
=
10ms
1
/ R
1
T
3V
J
C
=25°C
0.30438
0.09698
0.00521
0.00042
100ms
2
=
, ( s )
2
/R
R
2
2
4V
1s
10
Figure 26. Typical diode forward voltage as
a function of junction temperature
3.0V
2.5V
2.0V
1.5V
1.0V
0.5V
0.0V
0°C
T
j
,
JUNCTION TEMPERATURE
40°C
SKW25N120
80°C
I
F
=12A
Rev. 2_1
I
F
=25A
120°C
I
F
=50A
Apr 06