SKW25N120 Infineon Technologies, SKW25N120 Datasheet - Page 6

• Manufacturer Part Number: SKW25N120
• Description: IGBT NPT 1200V 46A 313W TO247-3
• Manufacturer: Infineon Technologies

Specifications of SKW25N120

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.6V @ 15V, 25A
• Current - Collector (ic) (max): 46A
• Power - Max: 313W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Dc Collector Current: 46A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 313W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Transistor Type: IGBT
• Rohs Compliant: Yes
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 46.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
1000ns
1000ns
100ns
Figure 9. Typical switching times as a
function of collector current
(inductive load, T
V
dynamic test circuit in Fig.E )
100ns
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V
V
dynamic test circuit in Fig.E )
10ns
10ns
CE
GE
= 800V, V
= +15V/0V, I
-50°C
0A
t
d(on)
t
T
d(off)
j
I
,
C
t
JUNCTION TEMPERATURE
,
f
COLLECTOR CURRENT
GE
0°C
20A
t
t
d(on)
f
C
= +15V/0V, R
j
CE
t
= 150 C,
r
= 25A, R
= 800V,
50°C
t
d(off)
40A
G
= 22 ,
100°C
G
= 2 2 ,
60A
150°C
t
r
6
1000ns
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T
V
dynamic test circuit in Fig.E )
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(I
100ns
C
CE
10ns
6V
5V
4V
3V
2V
1V
0V
= 0.3mA)
-50°C
= 800V, V
0
T
t
d(off)
j
t
,
t
r
f
10
JUNCTION TEMPERATURE
0°C
R
GE
G
,
= +15V/0V, I
j
GATE RESISTOR
= 150 C,
20
SKW25N120
50°C
30
C
100°C
Rev. 2_1
= 25A,
40
150°C
t
d(on)
50
max.
min.
typ.
Apr 06