SKW25N120 Infineon Technologies, SKW25N120 Datasheet - Page 4

• Manufacturer Part Number: SKW25N120
• Description: IGBT NPT 1200V 46A 313W TO247-3
• Manufacturer: Infineon Technologies

Specifications of SKW25N120

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.6V @ 15V, 25A
• Current - Collector (ic) (max): 46A
• Power - Max: 313W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Dc Collector Current: 46A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 313W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Transistor Type: IGBT
• Rohs Compliant: Yes
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 46.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
100A
350W
300W
250W
200W
150W
100W
80A
60A
40A
20A
Figure 1. Collector current as a function of
switching frequency
(T
V
Figure 3. Power dissipation as a function
of case temperature
(T
50W
0A
GE
j
0W
j
10Hz
= +15V/0V, R
25°C
150 C, D = 0.5, V
150 C)
f,
T
100Hz
SWITCHING FREQUENCY
50°C
C
I
,
c
CASE TEMPERATURE
G
T
T
= 22 )
C
C
=110°C
75°C
=80°C
1kHz
CE
= 800V,
100°C
10kHz
I
c
125°C
100kHz
4
100A
0.1A
Figure 4. Collector current as a function of
case temperature
(V
10A
60A
50A
40A
30A
20A
10A
1A
0A
GE
25°C
1V
Figure 2. Safe operating area
(D = 0, T
V
15V, T
CE
,
COLLECTOR
T
50°C
C
j
,
C
10V
CASE TEMPERATURE
= 25 C, T
150 C)
75°C
SKW25N120
-
EMITTER VOLTAGE
100V
j
100°C
150 C)
Rev. 2_1
1000V
125°C
15 s
t
200 s
1ms
p
50 s
DC
=1 s
Apr 06