SKW25N120 Infineon Technologies, SKW25N120 Datasheet - Page 8

• Manufacturer Part Number: SKW25N120
• Description: IGBT NPT 1200V 46A 313W TO247-3
• Manufacturer: Infineon Technologies

Specifications of SKW25N120

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.6V @ 15V, 25A
• Current - Collector (ic) (max): 46A
• Power - Max: 313W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Dc Collector Current: 46A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 313W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Transistor Type: IGBT
• Rohs Compliant: Yes
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 46.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(V
30 s
25 s
20 s
15 s
10 s
20V
15V
10V
5 s
0 s
CE
5V
0V
Figure 17. Typical gate charge
(I
10V
0nC
C
= 1200V, start at T
= 25A)
V
GE
11V
,
Q
GATE
100nC
GE
,
GATE CHARGE
-
12V
EMITTER VOLTAGE
j
= 25 C)
200nC
13V
U
CE
=960V
14V
300nC
15V
8
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(100V V
100pF
500A
400A
300A
200A
100A
1nF
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(V
0A
10V
GE
0V
V
CE
= 0V, f = 1MHz)
CE
V
,
GE
COLLECTOR
1200V, T
12V
,
GATE
10V
-
14V
EMITTER VOLTAGE
C
SKW25N120
= 25 C, T
-
EMITTER VOLTAGE
20V
16V
Rev. 2_1
j
150 C)
18V
30V
C
C
C
oss
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Apr 06
iss
20V