SKW25N120 Infineon Technologies, SKW25N120 Datasheet - Page 9

• Manufacturer Part Number: SKW25N120
• Description: IGBT NPT 1200V 46A 313W TO247-3
• Manufacturer: Infineon Technologies

Specifications of SKW25N120

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.6V @ 15V, 25A
• Current - Collector (ic) (max): 46A
• Power - Max: 313W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Dc Collector Current: 46A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 313W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Transistor Type: IGBT
• Rohs Compliant: Yes
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 46.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
Figure 21. Typical reverse recovery time as
a function of diode current slope
(V
dynamic test circuit in Fig.E )
Figure 23. Typical reverse recovery current
as a function of diode current slope
(V
dynamic test circuit in Fig.E )
500ns
400ns
300ns
200ns
100ns
R
R
50A
40A
30A
20A
10A
0ns
= 800V, T
= 800V, T
0A
300A/ s
300A/ s
d i
d i
F
F
/ d t,
/ d t,
j
j
= 150 C,
= 150 C,
500A/ s
500A/ s
DIODE CURRENT SLOPE
DIODE CURRENT SLOPE
I
F
=12A
I
F
=12A
700A/ s
700A/ s
I
F
=25A
I
F
=25A
900A/ s
900A/ s
9
Figure 22. Typical reverse recovery charge
as a function of diode current slope
(V
dynamic test circuit in Fig.E )
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(V
dynamic test circuit in Fig.E )
400A/ s
300A/ s
200A/ s
100A/ s
5µC
4µC
3µC
2µC
1µC
0µC
R
0A/ s
R
= 800V, T
= 800V, T
300A/ s
300A/ s
d i
di
F
F
/ d t,
/dt,
j
j
500A/ s
= 150 C,
= 150 C,
500A/ s
DIODE CURRENT SLOPE
DIODE CURRENT SLOPE
SKW25N120
700A/ s
700A/ s
I
F
=12A
I
F
Rev. 2_1
I
F
=12A
=25A
I
F
900A/ s
=25A
900A/ s
Apr 06