SKW25N120 Infineon Technologies, SKW25N120 Datasheet - Page 3

• Manufacturer Part Number: SKW25N120
• Description: IGBT NPT 1200V 46A 313W TO247-3
• Manufacturer: Infineon Technologies

Specifications of SKW25N120

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.6V @ 15V, 25A
• Current - Collector (ic) (max): 46A
• Power - Max: 313W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Dc Collector Current: 46A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 313W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Transistor Type: IGBT
• Rohs Compliant: Yes
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 46.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
1)
Power Semiconductors
Leakage inductance L and stray capacity C due to dynamic test circuit in figure E.
F
F
t
t
t
t
E
E
E
t
t
t
Q
I
d i
t
t
t
t
E
E
E
t
t
t
Q
I
d i
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
r r
S
F
r r m
d ( o n )
r
d ( o f f )
f
r r
S
F
r r m
o n
o f f
t s
o n
o f f
t s
r r
r r
r r
r r
/d t
/d t
j
j
=25 C
=150 C
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
j
j
j
j
C C
G E
R
C C
G E
R
G
G
=2 5 C ,
=2 5 C ,
F
=1 5 0 C
=1 5 0 C
F
1 )
1 )
1 )
= 8 00 V , I
1 )
= 8 00 V , I
= 22 ,
= 22 ,
/ d t =6 5 0 A/ s
/ d t =7 5 0 A/ s
3
= 80 0 V, I
= 15 /0 V ,
= 80 0 V, I
= 15 /0 V ,
=1 8 0n H,
=1 8 0n H,
= 4 0p F
= 4 0p F
Conditions
Conditions
F
F
C
C
= 2 5 A,
= 2 5 A,
= 2 5 A,
= 2 5 A,
Min.
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SKW25N120
Value
Value
typ.
typ.
730
470
820
280
130
2.2
1.5
3.7
1.0
3.8
2.9
6.7
4.3
45
40
30
90
20
50
36
42
32
Rev. 2_1
max.
max.
950
990
2.9
2.0
4.9
4.6
3.8
8.4
60
52
39
60
43
50
Apr 06
Unit
ns
mJ
ns
A
A/ s
Unit
ns
mJ
ns
A
A/ s
C
C