BUP314D Infineon Technologies, BUP314D Datasheet - Page 14

• Manufacturer Part Number: BUP314D
• Description: IGBT 1200V 42A W/DIODE DUO-PK
• Manufacturer: Infineon Technologies

Specifications of BUP314D

• Package / Case: TO-218AB/5
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 25A
• Current - Collector (ic) (max): 42A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 42 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Request inventory verification / Request inventory verification
• Other names: BUP314DIN

Power Semiconductors
16.25
15.70
13.10
19.80
20.82
1.68
4.90
2.27
1.85
1.07
1.90
1.90
2.87
2.87
0.55
1.05
3.68
4.17
3.50
5.49
6.04
MIN
5.44
PG-TO247-3
3
MAX
21.10
17.65
16.03
14.15
20.31
1.33
1.35
5.16
2.53
2.11
2.41
2.16
3.38
3.13
0.68
5.10
2.60
4.47
3.70
6.00
6.30
TrenchStop
14
0.193
0.089
0.073
0.042
0.075
0.075
0.113
0.113
0.022
0.820
0.640
0.041
0.618
0.516
0.145
0.066
0.780
0.164
0.138
0.216
0.238
MIN
®
M
M
0.214
Series
3
0.203
0.099
0.083
0.052
0.095
0.085
0.133
0.123
0.027
0.831
0.695
0.053
0.631
0.557
0.201
0.102
0.799
0.176
0.146
0.236
0.248
MAX
0
IKW25T120
Z8B00003327
17-12-2007
03
5 5
Rev. 2.2 Sep 08
0
7.5mm