BUP314D Infineon Technologies, BUP314D Datasheet - Page 4

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BUP314D

Manufacturer Part Number
BUP314D
Description
IGBT 1200V 42A W/DIODE DUO-PK
Manufacturer
Infineon Technologies
Datasheets

Specifications of BUP314D

Package / Case
TO-218AB/5
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.2V @ 15V, 25A
Current - Collector (ic) (max)
42A
Power - Max
300W
Input Type
Standard
Mounting Type
Through Hole
Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
42 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Request inventory verification / Request inventory verification
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Request inventory verification / Request inventory verification
Other names
BUP314DIN

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUP314D
Manufacturer:
SIEMENS
Quantity:
5 510
Part Number:
BUP314D
Manufacturer:
FSC
Quantity:
20 000
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
1)
2)
Power Semiconductors
Allowed number of short circuits: <1000; time between short circuits: >1s.
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
b
1)
C
C
C
Q
L
I
t
t
t
t
E
E
E
t
Q
I
d i
Symbol
C ( S C )
d ( o n )
r
d ( o f f )
f
r r
r r m
E
o n
o f f
t s
i s s
o s s
r s s
G a t e
r r
r r
/ d t
TrenchStop
j
=25 C
V
V
f=1MHz
V
V
V
V
T
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
j
j
j
C E
G E
C C
G E
G E
C C
C C
G E
R
G
= 25 C ,
= 25 C ,
F
4
2 )
= 2 5 C
2 )
= 60 0 V , I
= 2 2 ,
/d t= 800A/ s
=25V,
= 0 V ,
= 96 0 V, I
=15V
=15V,t
= 60 0 V, I
= 0 /1 5 V,
=1 80nH,
=39pF
= 600 V,
Conditions
®
Series
S C
F
C
=25A,
C
=25A
=25A
1 0 s
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IKW25T120
Value
1860
typ.
155
150
560
200
390
2.0
2.2
4.2
2.3
96
82
13
50
30
70
21
Rev. 2.2 Sep 08
max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
pF
nC
nH
A
Unit
ns
mJ
ns
µC
A
A/ s

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