BUP314D Infineon Technologies, BUP314D Datasheet - Page 10

• Manufacturer Part Number: BUP314D
• Description: IGBT 1200V 42A W/DIODE DUO-PK
• Manufacturer: Infineon Technologies

Specifications of BUP314D

• Package / Case: TO-218AB/5
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 25A
• Current - Collector (ic) (max): 42A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 42 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Request inventory verification / Request inventory verification
• Other names: BUP314DIN

Power Semiconductors
15V
10V
15µs
10µs
Figure 17. Typical gate charge
Figure 19. Short circuit withstand time as a
5V
0V
5µs
0µs
0nC
12V
V
(I
function of gate-emitter voltage
(V
GE
50nC
C
CE
=25 A)
,
GATE
Q
=600V, start at T
240V
GE
,
-
GATE CHARGE
100nC
EMITTETR VOLTAGE
14V
960V
150nC
J
=25°C)
200nC
16V
TrenchStop
10
Figure 18. Typical capacitance as a function
Figure 20. Typical short circuit collector
100pF
200A
150A
100A
®
10pF
50A
1nF
0A
Series
12V
0V
V
CE
V
of collector-emitter voltage
(V
current as a function of gate-
emitter voltage
(V
,
GE
COLLECTOR
GE
CE
,
GATE
=0V, f = 1 MHz)
14V
600V, T
-
10V
EMITTETR VOLTAGE
-
EMITTER VOLTAGE
IKW25T120
j
16V
150 C)
Rev. 2.2 Sep 08
20V
18V
C
C
C
oss
iss
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