BUP314D Infineon Technologies, BUP314D Datasheet - Page 6

• Manufacturer Part Number: BUP314D
• Description: IGBT 1200V 42A W/DIODE DUO-PK
• Manufacturer: Infineon Technologies

Specifications of BUP314D

• Package / Case: TO-218AB/5
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 25A
• Current - Collector (ic) (max): 42A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 42 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Request inventory verification / Request inventory verification
• Other names: BUP314DIN

Power Semiconductors
70A
60A
50A
40A
30A
20A
10A
150W
100W
Figure 1. Collector current as a function of
Figure 3. Power dissipation as a function of
0A
50W
0W
10Hz
25°C
switching frequency
(T
V
case temperature
(T
100Hz
f,
T
GE
T
50°C
j
j
T
C
SWITCHING FREQUENCY
C
=110°C
C
= 0/+15V, R
,
I
=80°C
I
150 C, D = 0.5, V
150 C)
c
CASE TEMPERATURE
c
1kHz
75°C
G
= 22 )
100°C
10kHz
CE
= 600V,
125°C
100kHz
TrenchStop
6
Figure 2. Safe operating area
Figure 4. Collector current as a function of
0,1A
40A
30A
20A
10A
10A
®
0A
1A
Series
25°C
1V
V
CE
(D = 0, T
T
case temperature
(V
,
j
COLLECTOR
T
GE
150 C;V
C
,
10V
CASE TEMPERATURE
15V, T
C
= 25 C,
75°C
GE
-
EMITTER VOLTAGE
j
=15V)
IKW25T120
150 C)
100V
Rev. 2.2 Sep 08
1000V
125°C
t
150µs
500µs
p
20ms
DC
=3µs
50µs
10µs