BUP314D Infineon Technologies, BUP314D Datasheet - Page 9

• Manufacturer Part Number: BUP314D
• Description: IGBT 1200V 42A W/DIODE DUO-PK
• Manufacturer: Infineon Technologies

Specifications of BUP314D

• Package / Case: TO-218AB/5
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 25A
• Current - Collector (ic) (max): 42A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 42 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Request inventory verification / Request inventory verification
• Other names: BUP314DIN

Power Semiconductors
14,0mJ
12,0mJ
10,0mJ
7mJ
6mJ
5mJ
4mJ
3mJ
2mJ
1mJ
0mJ
Figure 13. Typical switching energy losses
Figure 15. Typical switching energy losses
8,0mJ
6,0mJ
4,0mJ
2,0mJ
0,0mJ
E
E
10A
E
ts
off
on
*) E
*
*
due to diode recovery
*) E
50°C
on
T
as a function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
as a function of junction
temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
due to diode recovery
J
E
E
E
I
CE
GE
and E
on
,
C
off
ts
on
,
JUNCTION TEMPERATURE
=600V, V
=0/15V, I
and E
*
*
COLLECTOR CURRENT
20A
ts
include losses
ts
include losses
C
GE
100°C
=25A, R
=0/15V, R
30A
J
CE
=150°C,
=600V,
G
=22Ω,
G
40A
=22Ω,
150°C
TrenchStop
9
Figure 14. Typical switching energy losses
Figure 16. Typical switching energy losses
8 mJ
6 mJ
4 mJ
2 mJ
0 mJ
10mJ
®
9mJ
8mJ
7mJ
6mJ
5mJ
4mJ
3mJ
2mJ
1mJ
0mJ
Series
400V
E
E
V
E
ts
on
off
CE
*) E
*) E
*
*
due to diode recovery
as a function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
as a function of collector emitter
voltage
(inductive load, T
V
Dynamic test circuit in Figure E)
,
due to diode recovery
on
CE
GE
COLLECTOR
on
500V
and E
=600V, V
=0/15V, I
and E
R
G
,
ts
GATE RESISTOR
ts
include losses
include losses
600V
-
C
GE
EMITTER VOLTAGE
=25A, R
IKW25T120
=0/15V, I
J
J
=150°C,
=150°C,
700V
G
Rev. 2.2 Sep 08
=22Ω,
C
=25A,
800V
E
E
E
on
ts
off
*
*