BUP314D Infineon Technologies, BUP314D Datasheet - Page 5

• Manufacturer Part Number: BUP314D
• Description: IGBT 1200V 42A W/DIODE DUO-PK
• Manufacturer: Infineon Technologies

Specifications of BUP314D

• Package / Case: TO-218AB/5
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 25A
• Current - Collector (ic) (max): 42A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 42 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Request inventory verification / Request inventory verification
• Other names: BUP314DIN

Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
1)
Power Semiconductors
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
b
t
t
t
t
E
E
E
t
Q
I
d i
Symbol
d ( o n )
r
d ( o f f )
f
r r
r r m
o n
o f f
t s
r r
r r
/ d t
TrenchStop
j
=150 C
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
j
j
C C
G E
R
G
= 150 C
= 150 C
F
5
1 )
1 )
= 60 0 V , I
= 2 2 ,
/d t= 800A/ s
= 60 0 V, I
= 0 /1 5 V,
=1 80nH,
=39pF
Conditions
®
Series
F
C
=25A,
=25A,
min.
-
-
-
-
-
-
-
-
-
-
-
IKW25T120
Value
typ.
660
130
320
320
3.0
4.0
7.0
5.2
50
32
29
Rev. 2.2 Sep 08
max.
-
-
-
-
-
-
-
-
-
-
Unit
ns
mJ
ns
µC
A
A/ s