PSMN7R0-100PS,127 NXP Semiconductors, PSMN7R0-100PS,127 Datasheet - Page 4

• Manufacturer Part Number: PSMN7R0-100PS,127
• Description: MOSFET N-CH 100V 100A TO220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-100PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.8 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 125nC @ 10V
• Input Capacitance (ciss) @ Vds: 6686pF @ 50V
• Power - Max: 269W
• Mounting Type: Through Hole
• Gate Charge Qg: 125 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 12 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 269 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4971-5

NXP Semiconductors
PSMN7R0-100PS_2
Product data sheet
Fig 3.
(A)
I
10
D
10
10
10
-1
3
2
1
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
1
Limit R
DSon
= V
DS
/ I
D
All information provided in this document is subject to legal disclaimers.
10
DC
Rev. 02 — 7 January 2010
N-channel 100V 6.8 mΩ standard level MOSFET in TO220
10
2
t
100 μ s
1 ms
10 ms
100 ms
p
= 10 μ s
PSMN7R0-100PS
V
DS
(V)
© NXP B.V. 2010. All rights reserved.
003aad559
10
3
4 of 16