PSMN7R0-100PS,127 NXP Semiconductors, PSMN7R0-100PS,127 Datasheet - Page 7

• Manufacturer Part Number: PSMN7R0-100PS,127
• Description: MOSFET N-CH 100V 100A TO220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-100PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.8 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 125nC @ 10V
• Input Capacitance (ciss) @ Vds: 6686pF @ 50V
• Power - Max: 269W
• Mounting Type: Through Hole
• Gate Charge Qg: 125 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 12 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 269 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4971-5

NXP Semiconductors
Table 6.
PSMN7R0-100PS_2
Product data sheet
Symbol
t
t
t
t
Source-drain diode
V
t
Q
d(on)
r
d(off)
f
rr
Fig 5.
SD
r
(A)
I
D
300
240
180
120
60
0
function of drain-source voltage; typical values
Output characteristics: drain current as a
0
Characteristics
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
10
1
20
…continued
2
6
Conditions
V
R
I
see
I
V
S
S
DS
G(ext)
DS
= 25 A; V
= 25 A; dI
3
V
5.5
All information provided in this document is subject to legal disclaimers.
Figure 16
= 50 V; R
= 50 V
GS
003a a d562
V
(V) = 4
= 4.7 Ω; T
DS
4.5
(V)
5
GS
Rev. 02 — 7 January 2010
S
4
/dt = 100 A/µs; V
L
= 0 V; T
= 2 Ω; V
j
= 25 °C
N-channel 100V 6.8 mΩ standard level MOSFET in TO220
j
GS
= 25 °C;
Fig 6.
= 10 V;
12000
10000
GS
(pF)
8000
6000
4000
2000
C
= 0 V;
function of gate-source voltage; typical values
Input and reverse transfer capacitances as a
0
5
PSMN7R0-100PS
Min
-
-
-
-
-
-
-
10
Typ
34.6
45.6
103.9
49.5
0.8
64
167
15
© NXP B.V. 2010. All rights reserved.
003a a d566
V
Max
-
-
-
-
1.2
-
-
GS
C
C
is s
rs s
(V)
20
Unit
ns
ns
ns
ns
V
ns
nC
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