PSMN7R0-100PS,127 NXP Semiconductors, PSMN7R0-100PS,127 Datasheet - Page 6

• Manufacturer Part Number: PSMN7R0-100PS,127
• Description: MOSFET N-CH 100V 100A TO220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-100PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.8 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 125nC @ 10V
• Input Capacitance (ciss) @ Vds: 6686pF @ 50V
• Power - Max: 269W
• Mounting Type: Through Hole
• Gate Charge Qg: 125 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 12 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 269 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4971-5

NXP Semiconductors
6. Characteristics
Table 6.
PSMN7R0-100PS_2
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
DSS
GSS
(BR)DSS
GS(th)
GS(pl)
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
internal gate resistance
(AC)
total gate charge
gate-source charge
pre-threshold
gate-source charge
post-threshold
gate-source charge
gate-drain charge
gate-source plateau
voltage
input capacitance
output capacitance
reverse transfer
capacitance
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
V
see
f = 1 MHz
I
see
I
I
see
I
see
I
see
V
V
see
D
D
D
D
D
D
D
D
D
D
DS
DS
GS
GS
GS
GS
GS
DS
DS
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 25 A; V
= 0 A; V
= 25 A; V
= 25 A; V
= 25 A; V
All information provided in this document is subject to legal disclaimers.
Figure 10
Figure 11
Figure 10
Figure 12
Figure 12
Figure 13
Figure 17
Figure 14
Figure 14
Figure 14
Figure 15
= 100 V; V
= 100 V; V
= 50 V; see
= 50 V; V
= 20 V; V
= -20 V; V
= 10 V; I
= 10 V; I
= 10 V; I
DS
DS
DS
DS
DS
Rev. 02 — 7 January 2010
DS
DS
DS
D
D
D
= 0 V; V
GS
DS
and
and
and
and
DS
= 15 A; T
= 15 A; T
= 15 A; T
= 50 V; V
= 50 V; V
= 50 V; V
= 50 V; V
GS
GS
= V
= V
= V
GS
GS
Figure 14
= 0 V; T
= 0 V; f = 1 MHz; T
= 0 V; T
= 0 V; T
= 0 V; T
N-channel 100V 6.8 mΩ standard level MOSFET in TO220
= 0 V; T
= 0 V; T
10
14
17
17
GS
GS
GS
; T
; T
; T
GS
j
j
j
j
j
j
GS
GS
GS
GS
= 10 V
j
= 175 °C;
= 25 °C;
= -55 °C;
= 100 °C;
= 175 °C;
= 25 °C;
j
= 25 °C
j
j
= 25 °C
j
j
and
= 125 °C
= 25 °C
= 10 V;
= 10 V;
= 10 V;
= 10 V;
= -55 °C
= 25 °C
17
j
= 25 °C;
PSMN7R0-100PS
Min
90
100
1
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
3
-
-
0.08
10
10
-
15
5.4
0.74
125
100
28
19.4
9
36
4.3
6686
438
272
© NXP B.V. 2010. All rights reserved.
Max
-
-
-
4
4.6
150
5
100
100
12
19
6.8
-
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
nC
V
pF
pF
pF
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