PSMN7R0-100PS,127 NXP Semiconductors, PSMN7R0-100PS,127 Datasheet - Page 8

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PSMN7R0-100PS,127

Manufacturer Part Number
PSMN7R0-100PS,127
Description
MOSFET N-CH 100V 100A TO220AB
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN7R0-100PS,127

Package / Case
TO-220AB-3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6.8 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
125nC @ 10V
Input Capacitance (ciss) @ Vds
6686pF @ 50V
Power - Max
269W
Mounting Type
Through Hole
Gate Charge Qg
125 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
12 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
100 A
Power Dissipation
269 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4971-5
NXP Semiconductors
PSMN7R0-100PS_2
Product data sheet
Fig 7.
Fig 9.
R
(mΩ)
(S )
g
DS on
240
fs
180
120
60
40
30
20
10
0
0
drain current; typical values
of gate-source voltage; typical values
Forward transconductance as a function of
Drain-source on-state resistance as a function
0
0
50
5
100
10
150
15
200
All information provided in this document is subject to legal disclaimers.
V
003a a d572
003a a d571
GS
I
D
(V)
(A)
250
Rev. 02 — 7 January 2010
20
N-channel 100V 6.8 mΩ standard level MOSFET in TO220
Fig 8.
Fig 10. Gate-source threshold voltage as a function of
V
GS(th)
(V)
(A)
I
D
60
45
30
15
5
4
3
2
1
0
0
−60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
0
0
PSMN7R0-100PS
T
j
2
= 175 °C
60
max
min
typ
4
120
T
© NXP B.V. 2010. All rights reserved.
j
V
= 25 °C
003a a d568
GS
003aad280
T
j
(°C)
(V)
180
6
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