PSMN7R0-100PS,127 NXP Semiconductors, PSMN7R0-100PS,127 Datasheet - Page 5

• Manufacturer Part Number: PSMN7R0-100PS,127
• Description: MOSFET N-CH 100V 100A TO220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-100PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.8 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 125nC @ 10V
• Input Capacitance (ciss) @ Vds: 6686pF @ 50V
• Power - Max: 269W
• Mounting Type: Through Hole
• Gate Charge Qg: 125 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 12 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 269 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4971-5

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN7R0-100PS_2
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th (j-mb)
10
10
10
10
-1
-2
-3
-4
1
1e -6
Transient thermal impedance from junction to mounting base as a function of pulse duration
δ = 0.5
0.2
0.1
0.05
0.02
s ingle s hot
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
10
-5
10
-4
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 January 2010
Conditions
see
vertical in free air
10
Figure 4
-3
N-channel 100V 6.8 mΩ standard level MOSFET in TO220
10
-2
10
PSMN7R0-100PS
-1
Min
-
-
P
1
Typ
0.3
60
t
p
T
© NXP B.V. 2010. All rights reserved.
t
p
003a a d560
(s )
δ =
Max
0.56
-
T
t
p
t
10
Unit
K/W
K/W
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