PSMN7R0-100PS,127 NXP Semiconductors, PSMN7R0-100PS,127 Datasheet - Page 9

• Manufacturer Part Number: PSMN7R0-100PS,127
• Description: MOSFET N-CH 100V 100A TO220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-100PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.8 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 125nC @ 10V
• Input Capacitance (ciss) @ Vds: 6686pF @ 50V
• Power - Max: 269W
• Mounting Type: Through Hole
• Gate Charge Qg: 125 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 12 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 269 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4971-5

NXP Semiconductors
PSMN7R0-100PS_2
Product data sheet
Fig 11. Sub-threshold drain current as a function of
Fig 13. Drain-source on-state resistance as a function
(A)
R
I
(mΩ)
10
10
10
10
10
10
D
DS on
−1
−2
−3
−4
−5
−6
20
15
10
5
0
gate-source voltage
of drain current; typical values
0
0
20
2
40
V
min
GS
(V) = 4.5
60
typ
4
max
V
10
80
All information provided in this document is subject to legal disclaimers.
GS
003a a d563
(V)
I
D
03aa35
20
(A)
5
6
100
Rev. 02 — 7 January 2010
6
N-channel 100V 6.8 mΩ standard level MOSFET in TO220
Fig 12. Normalized drain-source on-state resistance
Fig 14. Gate charge waveform definitions
a
3.2
2.4
1.6
0.8
0
-60
factor as a function of junction temperature
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
0
GS1
PSMN7R0-100PS
I
Q
D
GS
Q
GS2
60
Q
G(tot)
Q
GD
120
© NXP B.V. 2010. All rights reserved.
003aad774
003aaa508
T
j
(°C)
180
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