PSMN4R0-40YS,115 NXP Semiconductors, PSMN4R0-40YS,115 Datasheet - Page 5

MOSFET N-CH 40V 100A LFPAK

PSMN4R0-40YS,115

Manufacturer Part Number
PSMN4R0-40YS,115
Description
MOSFET N-CH 40V 100A LFPAK
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN4R0-40YS,115

Package / Case
LFPak-4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.2 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
2410pF @ 20V
Power - Max
106W
Mounting Type
Surface Mount
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4 mOhms
Drain-source Breakdown Voltage
40 V
Continuous Drain Current
100 A
Power Dissipation
106 W
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4905-2
934063937115

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PSMN4R0-40YS,115
Manufacturer:
NXP
Quantity:
20 000
NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN4R0-40YS
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
10
-1
-2
-3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
δ = 0.5
0.2
0.05
0.02
0.1
single shot
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
10
-5
Conditions
see
All information provided in this document is subject to legal disclaimers.
10
-4
Figure 4
Rev. 02 — 12 July 2010
N-channel LFPAK 40 V 4.2 mΩ standard level MOSFET
10
-3
10
-2
PSMN4R0-40YS
Min
-
10
P
-1
t
Typ
0.54
p
T
t
p
© NXP B.V. 2010. All rights reserved.
(s)
003aac657
δ =
Max
1.42
T
t
p
t
1
Unit
K/W
5 of 15

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