PSMN4R0-40YS,115 NXP Semiconductors, PSMN4R0-40YS,115 Datasheet - Page 8

• Manufacturer Part Number: PSMN4R0-40YS,115
• Description: MOSFET N-CH 40V 100A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN4R0-40YS,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 2410pF @ 20V
• Power - Max: 106W
• Mounting Type: Surface Mount
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 mOhms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 100 A
• Power Dissipation: 106 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4905-2; 934063937115

NXP Semiconductors
PSMN4R0-40YS
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
R
(mΩ)
GS(th)
(V)
DSon
15
12
5
4
3
2
1
0
9
6
3
0
−60
of gate-source voltage; typical values
junction temperature
Drain-source on-state resistance as a function
0
0
5
60
10
max
min
typ
120
15
All information provided in this document is subject to legal disclaimers.
003aad161
V
003aad280
T
j
GS
(°C)
(V)
180
20
Rev. 02 — 12 July 2010
N-channel LFPAK 40 V 4.2 mΩ standard level MOSFET
Fig 10. Sub-threshold drain current as a function of
Fig 12. Normalized drain-source on-state resistance
(A)
I
10
10
10
10
10
10
D
a
1.5
0.5
−1
−2
−3
−4
−5
−6
2
1
0
−60
gate-source voltage
factor as a function of junction temperature
0
0
2
PSMN4R0-40YS
min
60
typ
4
120
max
V
© NXP B.V. 2010. All rights reserved.
GS
T
j
(V)
( ° C)
03aa35
03aa27
180
6
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