PSMN4R0-40YS,115 NXP Semiconductors, PSMN4R0-40YS,115 Datasheet - Page 7

• Manufacturer Part Number: PSMN4R0-40YS,115
• Description: MOSFET N-CH 40V 100A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN4R0-40YS,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 2410pF @ 20V
• Power - Max: 106W
• Mounting Type: Surface Mount
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 mOhms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 100 A
• Power Dissipation: 106 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4905-2; 934063937115

NXP Semiconductors
Table 6.
Tested to JEDEC standards where applicable.
PSMN4R0-40YS
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(A)
4000
(pF)
3000
2000
1000
I
D
120
100
C
80
60
40
20
0
0
function of drain-source voltage; typical values
function of gate-source voltage; typical values
Output characteristics: drain current as a
Input and reverse transfer capacitances as a
0
0
20
Characteristics
10
Parameter
source-drain voltage
reverse recovery time
recovered charge
6.5
6
1
3
…continued
2
6
V
GS
9
3
(V) = 4.5
Conditions
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
V
DS
003aad154
003aad159
V
GS
= 25 A; V
= 50 A; dI
DS
5.5
Figure 17
(V)
= 20 V
5
C
C
(V)
iss
rss
12
4
Rev. 02 — 12 July 2010
GS
S
/dt = -100 A/µs; V
= 0 V; T
N-channel LFPAK 40 V 4.2 mΩ standard level MOSFET
Fig 6.
Fig 8.
j
= 25 °C;
(A)
I
(S)
g
D
100
fs
80
60
40
20
80
60
40
20
0
0
function of gate-source voltage; typical values
drain current; typical values
Transfer characteristics: drain current as a
Forward transconductance as a function of
GS
0
0
= 0 V;
T
j
= 175 °C
20
2
T
j
= 150 °C
PSMN4R0-40YS
Min
-
-
-
40
4
T
Typ
0.83
42
45
j
= 25 °C
60
6
© NXP B.V. 2010. All rights reserved.
003aad155
V
003aad160
GS
I
D
Max
1.2
-
-
(A)
(V)
80
8
Unit
V
ns
nC
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