PSMN4R0-40YS,115 NXP Semiconductors, PSMN4R0-40YS,115 Datasheet - Page 12

• Manufacturer Part Number: PSMN4R0-40YS,115
• Description: MOSFET N-CH 40V 100A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN4R0-40YS,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 2410pF @ 20V
• Power - Max: 106W
• Mounting Type: Surface Mount
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 mOhms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 100 A
• Power Dissipation: 106 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4905-2; 934063937115

NXP Semiconductors
8. Revision history
Table 7.
PSMN4R0-40YS
Product data sheet
Document ID
PSMN4R0-40YS v.2
Modifications:
PSMN4R0-40YS v.1
Revision history
20100712
20090625
Release date
•
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data sheet
Rev. 02 — 12 July 2010
N-channel LFPAK 40 V 4.2 mΩ standard level MOSFET
Change notice
-
-
PSMN4R0-40YS
Supersedes
PSMN4R0-40YS v.1
-
© NXP B.V. 2010. All rights reserved.
12 of 15