BUK9609-75A,118 NXP Semiconductors, BUK9609-75A,118 Datasheet - Page 2

• Manufacturer Part Number: BUK9609-75A,118
• Description: MOSFET N-CH 75V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9609-75A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 8840pF @ 25V
• Power - Max: 230W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0085 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 75 A
• Power Dissipation: 230000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056283118; BUK9609-75A /T3; BUK9609-75A /T3

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUK9609-75A_3
Product data sheet
Pin
1
2
3
mb
Type number
BUK9609-75A
Symbol
V
V
V
I
I
P
T
T
V
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
GSM
DS(AL)S
Symbol
G
D
S
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak gate-source
voltage
source current
peak source current
non-repetitive
drain-source avalanche
energy
Package
Name
D2PAK
Description
gate
drain
source
mounting base; connected to
drain
Description
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one
lead cropped)
Conditions
T
R
V
V
T
T
pulsed; t
T
t
I
T
p
D
j
mb
mb
mb
j(init)
GS
GS
GS
≤ 10 µs; pulsed; T
≥ 25 °C; T
= 75 A; V
= 25 °C; t
= 25 °C; see
= 25 °C
= 5 V; T
= 5 V; T
= 20 kΩ
= 25 °C; unclamped
p
Rev. 03 — 22 September 2008
≤ 50 µs
sup
j
j
j
= 100 °C; see
= 25 °C; see
≤ 175 °C
p
≤ 75 V; R
≤ 10 µs; pulsed; see
Figure 2
mb
= 25 °C
Simplified outline
GS
Figure
= 50 Ω; V
Figure 1
3; see
(D2PAK)
SOT404
1
Figure 3
GS
mb
2
= 5 V;
Figure 1
3
N-channel TrenchMOS logic level FET
BUK9609-75A
Graphic symbol
Min
-
-
-10
-
-
-
-
-55
-55
-15
-
-
-
G
mbb076
© NXP B.V. 2008. All rights reserved.
Max
75
75
10
65
75
440
230
175
175
15
75
440
562
D
Version
SOT404
S
Unit
V
V
V
A
A
A
W
°C
°C
V
A
A
mJ
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